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The photoluminescence of the ion-implanted and thermally annealed wafers is significantly stronger than that of the non-implanted and non-annealed wafer, mainly due to the considerable decline of the front surface recombination velocity. This change ensured a low back surface recombination velocity and high. The ion implantation and thermal annealing processes result in significant decreases of the minority carrier lifetime and diffusion coefficient of the implanted layer, and the recombination velocity at the front surface, and all three parameters decrease with the increasing ion fluence. The cells efficiency potential was evaluated through the use of PC1D modelling. Both the simulated and experimental results show that the transport properties of the implanted layer can be obtained by fitting the PCR amplitudes under the multi-wavelength excitations at a fixed modulation frequency to the theoretical model via a multi-parameter fitting procedure. Experiments on As + implanted and thermally annealed silicon wafers with ion fluences ranging from 5 × 10 14 to 1 × 10 16 cm -2 were performed, with 830 nm, 660 nm, and 405 nm excitations. Simulations are carried out to show the dependences of the PCR amplitudes on the structural and transport properties (thickness, minority carrier lifetime, diffusion coefficient, and front surface recombination velocity) of the implanted layer with excitation in a wide spectral range, respectively. The influence of the front surface recombination velocity (FSRV) on the performance of IBC solar cells with different FSF layer doping concentrations was. as the spatially averaged surface recombination velocity S. Finally, the roadmap of the solar cell efficiency for an industrial PERC technology up to 24% is presented, with the aim of providing a potential guideline for industrial researchers.The electronic transport properties of ion-implanted and thermally annealed silicon wafers and their effects on the room temperature photoluminescence have been investigated by a two-layer photocarrier radiometry (PCR) model with multiple-wavelength excitations. The high surface recombination velocity (SRV) under the front contacts is accounted for in DESSIS but neglected in the PC1D simulations when using S.
#Pc1d front surface recombination velocity series
The data include: i) PC2D simulations on J 02, ii) the calculation of series resistance and back surface recombination velocity (BSRV) on the rear side metallization of PERC cell for the case of a point contact, and iii) the PC1D simulation on the cumulative photo-generation and recombination along the distance from the front surface.
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Aside from the information already presented in Huang et al., 2017, here we provide data related to Sectin 3 in Huang et al., 2017 concerning the analysis of the recombination losses׳ mechanisms by PC1D V5.9 and PC2D simulations (Clugston and Basore, 1997, Basore and Cabanas-Holmen, 2011, Cabanas-Holmen and Basore, 2012 and Cabanas-Holmen and Basore, 2012.), ,, on our current industrial Al 2O 3 PERC cell. The data include: i) PC2D simulations on J02, ii) the calculation of series resistance and back surface recombination velocity (BSRV) on the rear side metallization of PERC cell for the case of a point contact, and iii) the PC1D simulation on the cumulative photo-generation and recombination along the distance from the front surface. This data article is related to our recently published article ('20.8% industrial PERC solar cell: ALD Al 2O 3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%', Huang et al., 2017 ) where we have presented a systematic evaluation of the overall cell processing and a cost-efficient industrial roadmap for PERC cells.